J
2016
Tetrakis(trimethylsilyloxy)silane for nanostructured SiO2-like films deposited by PECVD at atmospheric pressure
SCHÄFER, Jan; Jaroslav HNILICA; Jiří ŠPERKA; Antje QUADE; Vít KUDRLE et al.
Basic information
Original name
Tetrakis(trimethylsilyloxy)silane for nanostructured SiO2-like films deposited by PECVD at atmospheric pressure
Authors
SCHÄFER, Jan; Jaroslav HNILICA; Jiří ŠPERKA; Antje QUADE; Vít KUDRLE; Rüdiger FOEST; Jiří VODÁK and Lenka ZAJÍČKOVÁ
Edition
Surface and Coatings Technology, Elsevier, 2016, 0257-8972
Other information
Type of outcome
Article in a journal
Field of Study
Plasma physics and discharge through gases
Country of publisher
United Kingdom of Great Britain and Northern Ireland
Confidentiality degree
is not subject to a state or trade secret
Marked to be transferred to RIV
Yes
RIV identification code
RIV/00216224:14310/16:00087594
Organization
Přírodovědecká fakulta – Repository – Repository
Keywords in English
Tetrakis(trimethylsilyloxy)silane; Tetrakis(trimethylsiloxy)silane; Plasma jet; Silicon dioxide
Links
ED1.1.00/02.0068, research and development project. ED2.1.00/03.0086, research and development project. LO1411, research and development project. TE02000011, research and development project.
In the original language
We performed the thin films deposition using atmospheric pressure plasma enhanced chemical vapour deposition (AP-PECVD) by means of a radiofrequency and a microwave plasma jets operating with mixtures of argon and tetrakis(trimethylsilyloxy)silane (TTMS).
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