@article{21906,
   author = {Schäfer, Jan and Hnilica, Jaroslav and Šperka, Jiří and Quade, Antje and Kudrle, Vít and Foest, Rüdiger and Vodák, Jiří and Zajíčková, Lenka},
   article_number = {15 June 2016},
   keywords = {Tetrakis(trimethylsilyloxy)silane; Tetrakis(trimethylsiloxy)silane; Plasma jet; Silicon dioxide},
   language = {eng},
   issn = {0257-8972},
   journal = {Surface and Coatings Technology},
   title = {Tetrakis(trimethylsilyloxy)silane for nanostructured SiO2-like films deposited by PECVD at atmospheric pressure},
   volume = {295},
   year = {2016}
}

TY  - JOUR
ID  - 21906
AU  - Schäfer, Jan - Hnilica, Jaroslav - Šperka, Jiří - Quade, Antje - Kudrle, Vít - Foest, Rüdiger - Vodák, Jiří - Zajíčková, Lenka
PY  - 2016
TI  - Tetrakis(trimethylsilyloxy)silane for nanostructured SiO2-like films deposited by PECVD at atmospheric pressure
JF  - Surface and Coatings Technology
VL  - 295
IS  - 15 June 2016
SP  - 112-118
EP  - 112-118
PB  - Elsevier
SN  - 0257-8972
KW  - Tetrakis(trimethylsilyloxy)silane
KW  - Tetrakis(trimethylsiloxy)silane
KW  - Plasma jet
KW  - Silicon dioxide
N2  - We performed the thin films deposition using atmospheric pressure plasma enhanced chemical vapour deposition (AP-PECVD) by means of a radiofrequency and a microwave plasma jets operating with mixtures of argon and tetrakis(trimethylsilyloxy)silane (TTMS).
ER  - 

SCHÄFER, Jan, Jaroslav HNILICA, Jiří ŠPERKA, Antje QUADE, Vít KUDRLE, Rüdiger FOEST, Jiří VODÁK a Lenka ZAJÍČKOVÁ. Tetrakis(trimethylsilyloxy)silane for nanostructured SiO2-like films deposited by PECVD at atmospheric pressure. \textit{Surface and Coatings Technology}. Elsevier, roč.~295, 15 June 2016, s.~112-118. ISSN~0257-8972. 2016.