Přehled o publikaci
2016
Tetrakis(trimethylsilyloxy)silane for nanostructured SiO2-like films deposited by PECVD at atmospheric pressure
SCHÄFER, Jan; Jaroslav HNILICA; Jiří ŠPERKA; Antje QUADE; Vít KUDRLE et al.Basic information
Original name
Tetrakis(trimethylsilyloxy)silane for nanostructured SiO2-like films deposited by PECVD at atmospheric pressure
Authors
SCHÄFER, Jan; Jaroslav HNILICA; Jiří ŠPERKA; Antje QUADE; Vít KUDRLE; Rüdiger FOEST; Jiří VODÁK and Lenka ZAJÍČKOVÁ
Edition
Surface and Coatings Technology, Elsevier, 2016, 0257-8972
Other information
Language
English
Type of outcome
Article in a journal
Field of Study
Plasma physics and discharge through gases
Country of publisher
United Kingdom of Great Britain and Northern Ireland
Confidentiality degree
is not subject to a state or trade secret
References:
Marked to be transferred to RIV
Yes
RIV identification code
RIV/00216224:14310/16:00087594
Organization
Přírodovědecká fakulta – Repository – Repository
UT WoS
EID Scopus
Keywords in English
Tetrakis(trimethylsilyloxy)silane; Tetrakis(trimethylsiloxy)silane; Plasma jet; Silicon dioxide
Links
ED1.1.00/02.0068, research and development project. ED2.1.00/03.0086, research and development project. LO1411, research and development project. TE02000011, research and development project.
Changed: 11/7/2025 00:50, RNDr. Daniel Jakubík
Abstract
In the original language
We performed the thin films deposition using atmospheric pressure plasma enhanced chemical vapour deposition (AP-PECVD) by means of a radiofrequency and a microwave plasma jets operating with mixtures of argon and tetrakis(trimethylsilyloxy)silane (TTMS).
